Power semiconductor photovoltaic inverter-saving ace

Power semiconductors as grid tie inverter saving ace, much attention has been paid to research and development is increasingly active.

This series introduces grid tie inverter device research and development trends, required materials and application technology, etc. 

GaN and SiC is the grid tie inverter are developing behind the current silicon semiconductor material of a grid tie inverter, the serial will be invited to the first time familiar with the staff of the two materials to explain.

Power semiconductor devices (hereinafter referred to as the " solar inverters ) is the effective use of electric energy is the indispensable key components.

From the power of the personal computer solar inverters products and household appliances, electric cars and railway vehicle inverter, solar inverters system to the power regulator, such as solar inverters components used in every field of people around (figure 1). 

At present, resources and energy problems more and more serious, people have high hopes to improve the performance of the solar inverters device.

Figure 1 photovoltaic inverter components are widely used

Power device has been personal computers, white goods, electric automobile, railway vehicle photovoltaic inverter, photovoltaic inverter system power regulator, etc.

Support modern society of silicon power components from the beginning of the thyristor, after bipolar transistor (BJT), power MOSFET, the evolution of the insulated gate bipolar transistor (IGBT), has more than 50 years of development history.

Silicon power device development has become increasingly mature, the performance is very difficult to significantly higher as it has in the past.

Therefore, as a new semiconductor materials can leap improve performance, the band gap is very big "broadband gap semiconductor silicon carbide (SiC), gallium nitride (GaN) bears the ardent expectations of people.