The will after explaining the basic principle of grid tie inverter, analyzing the principle of improve performance by SiC, GaN, and so far grid tie inverter research and development situation of the two kinds of materials.
High pressure and low conduction resistance cannot be both at the same time
The first to introduce the basic principle of grid tie inverter. Power components are usually shut down (as) and open (conducting) using two kinds of condition.
Closed, that is,power inverter must be completely disconnect current voltage required.
About the opened state, required in the case of loss minimum, also is the minimum resistance through the current (voltage).
Closed under Vb components can't maintain the insulation state of voltage is called the breakdown voltage,power inverter or simply referred to as stress.
Closed resistance is closely related to the element size, because be components of resistance per unit area, so the use of indicators on resistance is characterized by RonA (A area).
In general, the higher the pressure, the smaller the conduction resistance, the higher the performance of the pure sine wave inverter, but pressure and reciprocal relationship between conduction resistance.
This is due to the working principle of pure sine wave inverter.
Here in the most simple pure sine wave inverter, schottky barrier diode (SBD) as an example, introduce the pressure relationship with the on resistance (figure 2).
Diode in a closed state is reverse biased condition, semiconductor is in no charge carriers (electrons and holes) run out of state.
Can be in a state of depletion of the semiconductor layer as insulators, shut off the electric current through the layer.
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